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Results 1 to 25 of 105

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Development of scintillating screens based on the single crystalline films of Ce doped (Gd,Y)3(Al,Ga,Sc)5O12 multi-component garnetsZORENKO, Yuriy; GORBENKO, Vitaliy; SAVCHYN, Volodymyr et al.Journal of crystal growth. 2014, Vol 401, pp 532-536, issn 0022-0248, 5 p.Conference Paper

High-temperature growth and characterization of (Er,Yb):YAl3(BO3)4 and NdAl3(BO3)4 epitaxial layersVOLKOVA, E; MALTSEV, V; KOLGANOVA, O et al.Journal of crystal growth. 2014, Vol 401, pp 547-549, issn 0022-0248, 3 p.Conference Paper

Dynamic control over the heat field during LBO crystal growth by High temperature solution methodKOKH, A; VLEZKO, V; KOKH, K et al.Journal of crystal growth. 2012, Vol 360, pp 158-161, issn 0022-0248, 4 p.Conference Paper

Growth of alkaline-earth vanadate garnet by synthetic contact metamorphism with molten V2O5-Na2SiO3 acting on dolomiteCISZEK, T. F.Journal of crystal growth. 2006, Vol 287, Num 2, pp 323-325, issn 0022-0248, 3 p.Conference Paper

Growth of large single crystals of the orthorhombic paracetamolMIKHAILENKO, M. A.Journal of crystal growth. 2004, Vol 265, Num 3-4, pp 616-618, issn 0022-0248, 3 p.Article

Investigations on the growth of LiB3O5 crystal by top-seeded solution growth techniqueSABHARWAL, S. C; TIWARI, Babita; SANGEETA et al.Journal of crystal growth. 2004, Vol 263, Num 1-4, pp 327-331, issn 0022-0248, 5 p.Article

Growth and luminescent properties of Ce and Ce-Tb doped (Y,Lu,Gd)2SiO5:Ce single crystalline filmsZORENKO, Yuriy; GORBENKO, Vitaliy; SAVCHYN, Volodymyr et al.Journal of crystal growth. 2014, Vol 401, pp 577-583, issn 0022-0248, 7 p.Conference Paper

In-situ observation of isothermal CaSiO3 crystallization in CaO-Al2O3-SiO2 melts: A study of the effects of temperature and compositionLIU, Jing-Jing; GONG CHEN; YAN, Peng-Cheng et al.Journal of crystal growth. 2014, Vol 402, pp 1-8, issn 0022-0248, 8 p.Article

Comparative numerical study of the effects of rotating and traveling magnetic fields on the carbon transport in the solution growth of SiC crystalsMERCIER, Frederic; NISHIZAWA, Shin-Ichi.Journal of crystal growth. 2013, Vol 362, pp 99-102, issn 0022-0248, 4 p.Conference Paper

Phase equilibrium of Bi2O3―Fe2O3 pseudo-binary system and growth of BiFeO3 single crystalLU, J; QIAO, L. J; FU, P. Z et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 936-941, issn 0022-0248, 6 p.Conference Paper

Submicron rectangular hollow tube crystals of rutile-type GeO2NIWA, K; IKEGAYA, H; HASEGAWA, M et al.Journal of crystal growth. 2010, Vol 312, Num 10, pp 1731-1735, issn 0022-0248, 5 p.Article

YbAl3(BO3)4 and YAl3(BO3)4 crystallization from K2Mo3O10-based high-temperature solutions : Phase relationships and solubility diagramsNEKRASOVA, L. V; LEONYUK, N. I.Journal of crystal growth. 2008, Vol 311, Num 1, pp 7-9, issn 0022-0248, 3 p.Article

Theoretical and technological solutions of the striation problemSCHEEL, Hans J.Journal of crystal growth. 2006, Vol 287, Num 2, pp 214-223, issn 0022-0248, 10 p.Conference Paper

Growth of La2CaB10O19 single crystals from CaO-Li2O-B2O3 fluxFANGLI JING; YICHENG WU; PEIZHEN FU et al.Journal of crystal growth. 2005, Vol 285, Num 1-2, pp 270-274, issn 0022-0248, 5 p.Article

Anisotropic grain growth in diphasic-gel-derived vanadium pentoxide doped mulliteJINHUA ZHANG; HONGDAN WU; SUXIN ZHANG et al.Journal of crystal growth. 2013, Vol 364, pp 11-15, issn 0022-0248, 5 p.Article

Growth, crystal structure and optical properties of new laser crystal Li3Ba2Nd3(MoO4)8JING LI; JIYANG WANG; YANG ZHANG et al.Journal of crystal growth. 2013, Vol 381, pp 61-64, issn 0022-0248, 4 p.Article

Growth of CuS platelet single crystals by the high-temperature solution growth techniqueGONCALVES, A. P; LOPES, E. B; CASACA, A et al.Journal of crystal growth. 2008, Vol 310, Num 11, pp 2742-2745, issn 0022-0248, 4 p.Article

On the influence of solution density on the formation of macroscopic defects in the liquid phase epitaxy of GaNHUSSY, S; BERWIAN, P; MEISSNER, E et al.Journal of crystal growth. 2008, Vol 311, Num 1, pp 62-65, issn 0022-0248, 4 p.Article

High temperature crystallization of NdAl3(BO3)4 and YAl3(BO3)4 doped with Sc3+and Ga3+LEONYUK, N. I; KOPORULINA, E. V; MALTSEV, V. V et al.Journal of crystal growth. 2005, Vol 281, Num 2-4, pp 587-591, issn 0022-0248, 5 p.Article

Seeded growth of GaN single crystals from solution at near atmospheric pressureFEIGELSON, B. N; FRAZIER, R. M; GOWDA, M et al.Journal of crystal growth. 2008, Vol 310, Num 17, pp 3934-3940, issn 0022-0248, 7 p.Conference Paper

Growth and characterization of barium-doped potassium tantalate crystalsARAVAZHI, S; TAPPONNIER, A; GÜNTHER, D et al.Journal of crystal growth. 2005, Vol 282, Num 1-2, pp 66-71, issn 0022-0248, 6 p.Article

Growth of GaN crystals from molten solution with Ga free solvent using a temperature gradientFEIGELSON, B. N; HENRY, R. L.Journal of crystal growth. 2005, Vol 281, Num 1, pp 5-10, issn 0022-0248, 6 p.Conference Paper

Development of the β-BaB2O4 crystal growth technique in the heat field of three-fold axis symmetryKOKH, A. E; BEKKER, T. B; VLEZKO, V. A et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 602-605, issn 0022-0248, 4 p.Conference Paper

Solution growth of SiC from silicon melts: Influence of the alternative magnetic field on fluid dynamicsMERCIER, Frederic; NISHIZAWA, Shin-Ichi.Journal of crystal growth. 2011, Vol 318, Num 1, pp 385-388, issn 0022-0248, 4 p.Conference Paper

Preparation and photoluminescent investigation of h-BN-like layered material B4CN4ZHUGE, F; JI, Z. G; HE, H. P et al.Journal of crystal growth. 2008, Vol 310, Num 16, pp 3869-3872, issn 0022-0248, 4 p.Article

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